Journal of The Surface Finishing Society of Japan
Online ISSN : 1884-3409
Print ISSN : 0915-1869
ISSN-L : 0915-1869
Reviews
Application of Si-based Quantum Dots to Floating Gate MOS Devices
Seiichi MIYAZAKI
Author information
Keywords: Silicon Quantum Dots, Floating Gate Memory, Discrete Charged States, Multi-Valued Memory, Coulomb Interaction
JOURNAL FREE ACCESS

2005 Volume 56 Issue 12 Pages 868

Details
Download PDF (863K)
Download citation RIS

(compatible with EndNote, Reference Manager, ProCite, RefWorks)

BIB TEX

(compatible with BibDesk, LaTeX)

Text
How to download citation
Contact us
Article 1st page
Content from these authors
© 2005 by The Surface Finishing Society of Japan
Previous article Next article
Favorites & Alerts

Recently viewed articles
Predecessor

Journal of the Metal Finishing Society of Japan

Genba Panfuretto

Jitsumu Hyomen Gijutsu

Share this page
feedback
 Top