Abstract
Hydrogenated amorphous Si(a-Si:H) film has excellent photoconductivity, and the electrical properties of the film can be controlled over a wide range by doping with substitutional impurities. Intense interest has been shown towards the application of a-Si:H, for example to solar cells, photoreceptors, thin film transistors, image sensors. Amorphous-Si:H films can be prepared by plasma CVD (glow discharge), reactive sputtering, photo CVD and other methods. In this report, characterisitics of plasma CVD a-Si:H which has been most widely studied are reviewed.
