Effect of Oxygen Ion Implanted TiO2 Film on Photocatalysis

Youichi INOUE; Yukiko IKEDA; Yasuhiro YOSHIMURA

doi:10.4139/sfj.50.90

Journal of The Surface Finishing Society of Japan

Online ISSN : 1884-3409
Print ISSN : 0915-1869
ISSN-L : 0915-1869

Effect of Oxygen Ion Implanted TiO₂ Film on Photocatalysis

Youichi INOUE, Yukiko IKEDA, Yasuhiro YOSHIMURA

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Keywords: TiO₂, photocatalysis, photoelectrochemical reaction, ion implantation

JOURNAL FREE ACCESS

1999 Volume 50 Issue 1 Pages 90-94

DOI https://doi.org/10.4139/sfj.50.90

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Abstract

The photoelectrochemical behavior of sol-gel formed TiO₂ film was studied, to improve photocatalysis. TiO₂ film baked at 773K was confirmed to be anatase, showing n-type semiconductivity under illumination. TiO₂ photopotential was reduced to -400mV vs. Ag/AgCl under UV illumination; when the lamp turn off, it gradually increased to the initial potential over a day.
Above phenomenon was found more effective in TiO₂ coated on oxygen ion implanted stainless steel substrate.

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