The Difference in Electronic States between the Surface and Bulk of Bi2Se3

Abstract

Core-level soft and hard X-ray photoemission (SXPES and HAXPES) measurements have been performed on Bi2Se3. The result indicated that, although surface region is oxidized, the bulk region detected by hard X-ray photoemission is not oxidized. Comparison of core-level binding energy between SXPES and HAXPES suggested that band bending occurs near the interface between the surface oxidized layer and the pristine Bi2Se3.