Abstract
Diamond is expected to be an excellent material exceeding SiC for producing low power loss electronic devices because of its superior material characteristics. We have developed series of elemental technologies including killer-defect free epitaxial growth, refractory Schottky contact, Schottky barrier height control associated with low leakage current and termination structure. As a result, we have developed a refractory Schottky barrier diode with fast switching capability, which can operate for over 300,000 hours at 250 °C. R&D of large scale wafers and large power devices are required to realize low-loss devices with a new concept of “cooling free.”
