Synthesis of boron-doped diamonds by a static high-pressure process

Abstract

High-quality boron-doped diamonds were synthesized from four boron-doped carbon sources with different boron concentration using a static high-pressure process with metal solvent. Three diamond pellets obtained from the carbon sources with boron concentrations less than the solubility limit showed a homogeneous appearance and obvious X-ray diffraction patterns characteristic of diamond. The electrically-conducting diamond with 0.2 mass% of boron showed the boron-bound exciton peak characteristic of boron doping in the cathode luminescence spectra, indicating its ability as a semiconductor.