Improvement of Oxidation Resistivity of Carbon Material by SiC Reduced from SiO₂ on the Inner Wall of Open Pores

Abstract

SiO₂ was separated from an impregnated borosilicate glass on the inner wall of open pores in a brand of carbon material, AGEN. Crystalline silicon carbide was formed by a reaction of this SiO₂ and wall carbon at 1900°C under a N₂ atmosphere. No weight loss in the obtained AGEN was observed in air at every temperatures between 400 and 1550°C. Little weight loss was also observed even in heating at 1600 and 1650°C.
Mechanical strength at room temperature was improved about 1.6 times compared with that of AGEN, but electrical conductivity was kept invariably after SiC formation.