Abstract
An investigation has been made on the effects of impurities on the development of (110)[001] secondary recrystallization texture in silicon iron. While dispersed inclusions, TiC, VN, NbC, and A1N, were observed to have the ability to promote secondary recrystallization, BN and ZrC, have not. Necessary amounts of impurity elements were found to be 0.04% Ti, 0.07% V, and 0.02% Nb, respectively. The solubility products [%M][%C] or [%M][%N](M: impurity element) of effective inclusions were estimated to be from 10-3 to 10-5 at the secondary recrystallization temperature. Inclusions of the order of 0.1 micron in size were observed to be dispersed more densely than 1012 particles/cm3 in final gauge strips in which secondary recrystallization occurred appreciably.
