On the Dissolution of Silicon into Solid Iron

Abstract

The dissolution of silicon into the solid iron was studied at PH₂=1 atm, 1150-1300°C by the aid of silicon monoxide gas.
The results obtained are as follows:
1) Unlike siliconization with silicon halide atmospheres, the weight of specimen after the present siliconizing treatment increased and the siliconized layer obtained was free from holes.
2) In this siliconizing method, the rate of dissolution of silicon was mainly controlled by the transportation of SiO (g) in gas diffusion layer.
3) An apparent activation energy obtained from the temperature dependence of the mass transfer coefficient, k_G was 16kcal/mol.