Abstract
In order to clarify the effect of tin addition on the secondary recrystallization of Fe-3%Si, the behavior of grain growth during secondarily recrystallizing annealing was investigated by SEM-ECC-ECP method. Tin addition accelerates remarkably (110) [001] -oriented secondary recrystallization. Tin is confirmed to segregate on the grain boundary of the tin-added specimen. The (110) [001] grain is approximately in the Σ 9 coincidence orientation in relation to the {111} <112> grain, close to which the main orientation is located in primary matrix of the specimen. It is considered that the relative migration rate of Σ 9 coincidence boundaries comparing with other ones is increased through the tin segregation.