Abstract
The sluggish migration of low angle grain boundaries was examined with regard to the progress of secondary recrystallisation in silicon iron processed by the two stage cold rolling method. The Goss secondary grains are frequently surrounded by low angle grain boundaries during their growth. In the present work, the retarded migration was demonstrated by measuring the frequency of grains at the perimeter of the secondary grains that could stunt growth through 'orientation pinning'. The poor migration of Goss secondary grains is concluded to be caused by their reduced mobility. The orientations of the stunting grains were observed to deviate less than 7° from those of the growing secondary recrystallisation grains. Such low angle grain boundaries are expected to be comprised of dislocation arrays and be much less mobile than general boundaries having misorientations of more than about 15°.
