Preparation of Copper halide transparent thin films by solution coating method and its evaluation

Abstract

CuBr_1-xI_x thin films were prepared as a variable band gap transparent p-type semiconductor, by solution coating method which is a non-vacuum process. We confirmed the change in XRD patterns, exciton absorption energy, band gap energy, and ionization potential of CuBr_1-xI_x thin films with the change of mixing ratio x. From the results, band lineup of CuBr_1-xI_x was proposed.