Investigation of defect reduction mechanism of Cu₂ZnSnS₄ by the photoluminescence spectroscopy

Abstract

The relationship between defects in Cu₂ZnSnS₄ and post annealing are discussed in terms of optical properties by photoluminescence (PL). Comparing the PL spectra of samples grown at 500 and 600 ℃ before and after post annealing, it was found that the spectrum shifted to the higher energy side. Therefore, it can be predicted that Cu_Zn was successfully reduced by post-annealing.