Crystalline growth of SnS absorber layers by annealing with the sulfur

Tomotaka Goto; Koki Kawabata; Izumi Orisaka; Takashi Minemoto

doi:10.57386/tmc.2017.0_21

2017

DOI https://doi.org/10.57386/tmc.2017.0_21

Conference information

Name : Proceedings of the International Workshop on High Efficiency CIGS Solar Cells

Location : [in Japanese]

Date : November 18, 2017

Crystalline growth of SnS absorber layers by annealing with the sulfur

Tomotaka Goto, Koki Kawabata, Izumi Orisaka, Takashi Minemoto

Author information

CONFERENCE PROCEEDINGS FREE ACCESS

Pages 21-23

Details

Abstract

Tin Sulfide (SnS) absorber layers were annealed with the sulfur at 550℃ to enlarge their crystalline grains. As a result, SnS layers with large crystalline grains were obtained. However, SnS solar cells comprised of the layers showed extremely low efficiency. Therefore, future experiments at the lower annealing temperature may be needed.

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