Name : Proceedings of the International Workshop on High Efficiency CIGS Solar Cells
Location : [in Japanese]
Date : November 18, 2017
Pages 6-8
In this work, the impact of the Ge introduction into Cu2SnS3 (CTS) on photovoltaic performances is investigated. By Ge introduction, non-radiative recombination near the absorber surface and the voids of absorber are decreased. Consequently, the interface carrier recombination of Cu2Sn1-xGexS3 solar cell is lower than that of CTS solar cell, thereby increasing open-circuit voltage and fill factor. The conversion efficiency is consequently enhanced through Ge introduction.
