Fabrication of transparent electronic device using oxide semiconductor for intelligent windows

Hiroaki Okada; Takuto Ejiri; Ryo Tanuma; Mutsumi Sugiyama

doi:10.57386/tmc.2018.0_54

2018

DOI https://doi.org/10.57386/tmc.2018.0_54

Conference information

Name : International Workshop on Ternary and Multinary Compounds

Location : [in Japanese]

Date : November 30, 2018 - December 01, 2018

Fabrication of transparent electronic device using oxide semiconductor for intelligent windows

Hiroaki Okada, Takuto Ejiri, Ryo Tanuma, Mutsumi Sugiyama

Author information

CONFERENCE PROCEEDINGS FREE ACCESS

Pages 54-57

Details

Abstract

Intelligent window can be realized by combing transparent thermal insulator and electronic device. The thermal insulator VO₂ thin film using VO₂ target by RF sputtering was demonstrated. The band alignment of NiO-TTFT between p-type NiO and different oxide/nitride-based insulators was investigated.

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