Study on Cu/IV ratio dependence of Cu₂Sn_1-xSi_xS₃ by luminescence observation

Abstract

Cu₂Sn_1-xSi_xS₃ (CTSiS) is a potential material for cost-effective and non-toxic absorbers in thin film solar cells. However, the basic physical properties of CTSiS have not been thoroughly investigated. Therefore, polycrystalline CTSiS with different Cu/IV ratios grew by solid-state reaction, and photoluminescence was observed. As a result of PL measurement of these samples, PL was observed at ~0.92 eV, 1.04 eV, and 1.13 eV.