In this study, p-type transparent semiconductor materials CuCl1-xIx(copper halide-based materials) were prepared by using wet process of sol-gel dip-coating method. Crystallinity on thin films is anticipated to be improved by annealing treatment. The thin films were evaluated using XRD, SEM, transmission, and reflection analyses. The results show that an annealing temperature of 180°C is optimal for film deposition.