Effect of controlling the surface layer of CIGS photoelectrodes for water splitting

Abstract

The effects of controlling the surface layer of Cu(In, Ga)Se2 (CIGS) photoelectrodes through annealing in various atmospheres on water splitting were investigated. The photocurrent density of the CIGS photoelectrode increased when annealed in O2, whereas the photocurrent density and onset potential decreased when annealed in a vacuum. These results suggest that the annealing process for the CIGS layer in different atmospheres influenced the surface layer of the CIGS photoelectrodes, affecting the photocurrent density and onset potential.