Effect of Pressure on the Magnetoresistance of the CeRh₂Si₂

Abstract

The magnetoresistance (MR) of single crystalline CeRh₂Si₂ has been measured at high pressure up to 2.3 GPa and at 4.2 K. At ambient pressure, the large MR has been observed. It is found that in a magnetic field dependence of MR, it shows a crossover near the critical pressure P_C2=0.6 GPa, from H to a H² dependence. The magnitude of MR, ΔR (P, H= 9 T) /R (P), shows a sudden decrease near P_C2, where the magnetic structure changes. These results are discussed on the basis of pressure induced quantum phase transition.