Abstract
The transfer ratio and magneto current were investigated for magnetic tunnel transistors (MTTs) with two different emitter tunnel junctions. The tunnel resistance-area products were 4×105 (Sample A) and 12×105Ωμm2 (Sample B). The transfer ratio of Sample B was approximately 1.3×10-4 at the emitter voltage of 1.0V, whereas that of Sample B was approximately 0.5×10-4. The maximum magneto currents of Sample A and B were approximately 300% and 200%, respectively. These results indicate that the transfer ratio and the magneto current depend on the tunnel resistance of the AlOχ layer.
