Abstract
X-ray reflectivity around the Bragg point has been applied to reveal the heterostructures and interfaces of many semiconductor materials combinations. We started with a simple structure of As delta-doping to test the capability of the technique to reveal the structure of a buried sub-monolayer, where the crystal structure is not changed and the model is simple. It was extended to realistic structures, i.e., single quantum well with different materials combinations such as InP/GaInAs/InP, InP/ErP/InP, and ZnSe/GaAs. It is demonstrated, using GaInP/GaAs/GaInP double heterostructures as an example, that this technique is a very powerful tool to correlate the growth process and the device properties through atomistic elucidation of the buried heterostructures nondestructively.
