Transactions of the Materials Research Society of Japan
Online ISSN : 2188-1650
Print ISSN : 1382-3469
ISSN-L : 1382-3469
Study on Buried Interfaces in Semiconductor Heterostructures by X-ray Reflectivity
Yoshikazu TakedaMasao Tabuchi
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2007 Volume 32 Issue 1 Pages 187-192

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Abstract
X-ray reflectivity around the Bragg point has been applied to reveal the heterostructures and interfaces of many semiconductor materials combinations. We started with a simple structure of As delta-doping to test the capability of the technique to reveal the structure of a buried sub-monolayer, where the crystal structure is not changed and the model is simple. It was extended to realistic structures, i.e., single quantum well with different materials combinations such as InP/GaInAs/InP, InP/ErP/InP, and ZnSe/GaAs. It is demonstrated, using GaInP/GaAs/GaInP double heterostructures as an example, that this technique is a very powerful tool to correlate the growth process and the device properties through atomistic elucidation of the buried heterostructures nondestructively.
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© 2007 The Materials Research Society of Japan
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