Abstract
Using X-ray CTR scattering measurement, Ga(In)N/GaInN/Ga(In)N quantum-well structures were investigated and ability of the X-ray CTR scattering measurement on the study of Ga(In)N/GaInN/Ga(In)N multilayer structures was discussed. Though it was difficult to study the GaInN/GaN layers grown on sapphire substrates, the GaInN/GaN layers grown on GaN substrates were successfully investigated by using the X-ray CTR scattering measurement. The results showed that degree of In distribution into the GaN layer was larger when the growth temperature was higher. The In compositions in the cap layers were always twice as large as those in the buffer layers, although they were designed to be the same. It suggests segregation of In from the well layers of which In composition was higher than those of cap and buffer layers.
