Transactions of the Materials Research Society of Japan
Online ISSN : 2188-1650
Print ISSN : 1382-3469
ISSN-L : 1382-3469
Electronic Materials
Synthesis and Characterization of AgPb18SbTe20 doped with PbI2
S. YonedaY. HikageY. OhnoY. IsodaY. ImaiY. Shinohara
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2008 Volume 33 Issue 2 Pages 311-313

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Abstract
  We attempted to synthesize solidified AgPb18SbTe20 doped with PbI2, which is an n-type dopant for PbTe, and evaluated its electrical and thermal conduction properties in order to investigate the possibility of improving its performance. Large amounts of dispersed and interconnected precipitates with a size of approximately 100 μm were observed, and small cobweb-like precipitates were observed in these precipitates. The consistency of Ag, Sb, Te, and I in these areas was found to be higher than that in other areas. It is suggested that the precipitates are AgSbTe2. The consistency of Ag in the small cobweb-like precipitates was found to be higher than that in other areas. It was evident that the carrier density at room temperature was approximately three times higher than that of undoped AgPb18SbTe20. It was found that the figure-of-merit at room temperature was 2.4 times higher than that of undoped AgPb18SbTe20. The temperature dependence of 1/(resistivity ρ × thermal conductivity κ), which is a factor of the performance of thermoelectric materials, was evaluated. It was found that 1/(ρκ) is larger than that of undoped AgPb18SbTe20 at temperatures below 170°C. It was suggested that doping of PbI2 contributed to the improved thermoelectric performance.
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© 2008 The Materials Research Society of Japan
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