Abstract
Synthesis of cubic boron nitride in equilibrium condition requires very high severe condition. In this paper, we report the experiment to make cubic boron nitride by nitrogen ion implantation to boron film. The velocity of ion beam accelerated by electrical potential is one hundred times higher than that of explosive power of chemical reaction, such as dynamite, which means the temperature of the implanted ion is as high as 500 million degrees. On the experiment, boron film was prepared on a single-crystal silicon substrate by RF sputtering. It was implanted by N2+ ion with ion accelerating voltage 30kV, at doses of 1.0x1017 ions/cm2, etc. The microstructure identification was carried out by transmission electron microscopy. The t-BN, c-BN and w-BN were confirmed to be synthesized in the film.
