Effect of Pt Buffer on Magnetic Property of Fe4N Thin Film Deposited by Atmospheric Pressure Halide CVD Method

Hisao Suzuki; Tom Okushi; Takato Nakamura; Naonori Sakamoto; Naoki Wakiya; Naoyuki Takahashi

doi:10.14723/tmrsj.33.1001

Transactions of the Materials Research Society of Japan

Online ISSN : 2188-1650
Print ISSN : 1382-3469
ISSN-L : 1382-3469

Effect of Pt Buffer on Magnetic Property of Fe₄N Thin Film Deposited by Atmospheric Pressure Halide CVD Method

Hisao Suzuki, Tom Okushi, Takato Nakamura, Naonori Sakamoto, Naoki Wakiya, Naoyuki Takahashi

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Keywords: Fe4N, AP-HCVD, Pt-buffer layer, thin film, Si substrate

JOURNAL FREE ACCESS

2008 Volume 33 Issue 4 Pages 1001-1004

DOI https://doi.org/10.14723/tmrsj.33.1001

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Abstract

Polycrystalline Fe4N thin films were prepared by AP-HCVD from the starting materials of FeCl3 and NH3. The effect of Pt buffer layer on Si(100) substrate was examined. It was clarified that coexistence of the second phases such as Fe3N and alpha-Fe was detected on Pt buffer layer. The sample was deposited on 10 nm-thick Pt buffered Si(100) substrate. It was considered that the introduction of Pt buffer layer affected to the coverage and uniformity of the film.

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