Effect of Pt Buffer on Magnetic Property of Fe₄N Thin Film Deposited by Atmospheric Pressure Halide CVD Method

Abstract

Polycrystalline Fe4N thin films were prepared by AP-HCVD from the starting materials of FeCl3 and NH3. The effect of Pt buffer layer on Si(100) substrate was examined. It was clarified that coexistence of the second phases such as Fe3N and alpha-Fe was detected on Pt buffer layer. The sample was deposited on 10 nm-thick Pt buffered Si(100) substrate. It was considered that the introduction of Pt buffer layer affected to the coverage and uniformity of the film.