Abstract
In this study, the growth of magnetite (Fe3O4) thin films on GaAs(100) substrates by gas flow sputtering is investigated. The condition of substrate preheating before the growth of Fe3O4 affects the epitaxy of the Fe3O4 film to a great extent: an epitaxial film is obtained by substrate preheating in air, while polycrystalline films are obtained without substrate preheating and by substrate preheating in vacuo and in Ar. The formation of arsenic oxides may play a key role in the epitaxial growth. Reflection high-energy electron diffraction suggests that the epitaxial relationship is Fe3O4(100)//GaAs(100) and Fe3O4[001]//GaAs[011], and scanning electron microscopy shows that the film has a mosaic-like texture.
