2009 Volume 34 Issue 1 Pages 113-116
(111)-oriented PZT(30/70) (PZT30) thin films were deposited on Pt/Ti/SiO2/Si substrate by Chemical Solution Deposition (CSD). The part of the Si substrates of 500 μm thickness were etched from back side by a wet chemical etching process. The depth of the back-etching was controlled by changing the etching time (residual Si; 25-180 μm). Dielectric and ferroelectric properties for the PZT30 thin films were measured at the back-etched and the un-etched part to clarify the effect of the residual stress on the electrical properties. (XRD).