Annealing Behavior of La₂O₃ Thin Film Deposited on Si (001) Substrate Studied by Spherical Aberration Corrected TEM/STEM

Abstract

The annealing behavior of an La₂O₃ thin film deposited on an Si (001) substrate was studied by spherical aberration corrected transmission electron microscopy. The thickness and roughness of the as-deposited and 300/500℃ post-deposition annealing (PDA) films was measured precisely. Composition analysis of the films was performed by electron energy loss spectroscopy. Based on the results, we propose a model for atomic diffusions and reactions during the PDA. We clarify the reason that the 300℃ PDA brings better electric properties than the as-deposition and the 500℃ PDA.