Abstract
Thin film solid oxide fuel cells are expected to lower operating temperature. Silicon substrate is well suited to fabricate a window structure, which is necessary for depositing electrodes on both side of an electrolyte film. However, cracks occur because of a thermal expansion coefficient mismatch between silicon and the electrolyte material. In order to suppress the cracks, lowering of growth temperature is desirable. In this paper, we focus on the crystallinity and ionic conductivity of 8-mole% yttria-stabilized zirconia (8YSZ) thin films deposited at low temperature.
