2009 Volume 34 Issue 4 Pages 755-757
Sputtering In2O3-ZnO on the glass substrate by the DC magnetron method and annealing, granular films were obtained. Controlling the carrier density by the frequency and the power of the light, the carrier density and the mobility were measured by the Hall effect for the high resistance films (180kΩ - 32GΩ). For the samples with the ZnO concentrations 0, 0.5% and 1% (wt), the mobility increases with the carrier density. For the samples ZnO 2% and 3%, the variation of the mobility is relatively small.