Abstract
Electrical conduction occurs and optical absorbance increases in a high resistive and transparent WO3 film with oxygen deficiencies. Both phenomena were caused by the generation of conduction electrons and electron transition from the valence band to the conduction band. Resistivity depends on the O2 flow rate of sputtering gas and on sputtering power. The absorbance of a tungsten oxide film increases after annealing. Resistivity can be controlled with the O2 flow rate of the sputtering gas and the sputtering power. It increases after annealing in air or vacuum because the oxygen deficiency is compensated and the carrier mobility increases.
