Abstract
In this study, well-ordered Ga doped/undoped ZnO nanorods were synthesized on the conductive ITO glass substrate using hydrothermal method, and its piezoresistive properties were measured. In the measurement, linearity of the piezoresistive change was ovserved. By the Ga doping, semiconductive resistivity of the nanorod was decreased. However, piezoresistive change ratio of both Ga doped/undoped nanorods remained almost the same. Such ZnO nanorods have a potential to serve as a nanosized force sensors.
