Abstract
The method as described below enables us to synthesize a continuous film of Mg2Si with the thickness up to 10 μm. By conducting potentiostatic electrolysis of a silicon cathode in a molten LiCl-KCl-MgCl2 melt, electrochemical formation of magnesium silicide proceeded according to the following reaction steps; Mg(II) + 2e- → Mg (Reduction of Mg(II) on a Si cathode), 2Mg + Si → Mg2Si (Formation of silicide film). From XRD and SEM results, a polycrystalline Mg2Si with a thickness of 20 μm was uniformly formed on Si (001) surface, after conducting potentiostaic electrolysis at 0.8 V (vs. Li+/Li). Absorption edge of the sample was exhibited at around 0.8 eV through transformation of reflectance spectra with Kubelka-Munk function.
