Transactions of the Materials Research Society of Japan
Online ISSN : 2188-1650
Print ISSN : 1382-3469
ISSN-L : 1382-3469
Regular Papers
Electronic Structure of BiFe1-xMxO3 (M=Mn and Co) Thin Films by Soft-X-Ray Spectroscopy
Tohru HiguchiHiroshi NaganumaJun MiuraYosuke InoueYi-Sheng LiuPer-Anders GlansJinghua GuoSoichiro Okamura
Author information
JOURNAL FREE ACCESS

2012 Volume 37 Issue 1 Pages 77-80

Details
Abstract
The electronic structures of BiFe0.96Mn0.04O3 and BiFe0.96Co0.04O3 thin films have studied by X-ray absorption spectroscopy and soft-X-ray emission spectroscopy. The BiFe0.96Mn0.04O3 thin film has the mixed valence states of Mn3+ and Mn4+, although the BiFe0.96Co0.04O3 thin film has the valence state of Co3+. The conduction band consists of the Fe 3d state. The valence band is mainly composed of the O 2p state hybridized with the Fe 3d state. The bandwidth of valence band depends on the valence state of doped element. The energy gap of BiFe0.96Mn0.04O3 thin film is smaller than that of BiFe0.96Co0.04O3 thin film. These findings may indicate that the leakage current of thin film is closely related with the electronic structure and energy gap.
Content from these authors
© 2012 The Materials Research Society of Japan
Previous article Next article
feedback
Top