Abstract
Alkanethiol (CH3(CH2)n−1SH) has been used for study on molecular devices by academic and industrial research fields. This is because with it a high density self-assembled monolayer (SAM) can be easily formed on gold surfaces. In this work, we employed metallic conducting Langmuir-Blodgett (LB) films composed of BEDO-TTF and stearic acid as a soft electrode onto the alkanethiol SAMs (C12-SAM and C16-SAM) in order to prepare a tunneling junction in a large size (≈0.2 mm2). We found that the edges of base Au electrodes induced defects in SAMs and caused a current leakage. The substrates with SiO2 covering layer at Au edge increased the yield rate of device fabrication. The current density – voltage (J-V) characteristics across the junctions exhibited a nonlinear behavior, which suggested that tunneling is the dominant conduction mechanism.
