Abstract
FeSix films were deposited on Si (100) substrates by RF-sputtering method using an FeSi4 target. Post-annealing was carried out at temperatures in the range of 400-900°C for 10 min in Ar gas. The surface of FeSix films was observed by optical microscope and crystal quality of the films was analyzed by X-ray diffraction (XRD) measurement. Sheet resistance of the deposited films was measured by four-point probe method. The films deposited using an FeSi4 target were completely transformed to β-FeSi2 after annealing over 500°C and Si (111) XRD peak was observed at 28.4° in the films annealed over 800°C. Cracks were not observed on the surface of the films annealed at as high as 900°C when deposited using an FeSi4 target, although the films deposited using an FeSi3 target had cracks on the surfaces after annealing over 700°C.
