Abstract
The Se-doped SrTiO3 (SrTi1-xScxO3-δ) thin films have prepared on Nb-doped SrTiO3 (100) substrates by RF magnetron sputtering. The thin film deposited at the substrate temperature of 500°C exhibits highly α-axis orientation. The as-deposited thin film consists of grain with a diameter of ～60 nm and smooth surface. The electrical conductivity exhibits hole conduction at low temperature region below 400°C and oxygen ion conduction at high temperature region above 550°C. The activation energy at the low temperature region, which is estimated from the Arrhenius plot of the electrical conductivity, is in a good agreement with the energy separation between the top of the valence band and the Fermi level.
