Abstract
Copper oxide thin films of the drop chemical deposition technique were annealed in air ambient with the temperature range 100 to 400 °C, and annealing effect was investigated. The crystalline structure of the annealed samples has been converted from Cu2O to CuO phase, and the O/Cu ratio has been changed from 0.78 to 1. The surface morphology of the films was enough smooth after annealing. Photo-electrochemical measurement showed that the photosensitivity has been increased by the annealing.
