Optical properties of Ga_0.82In_0.18N p-n homojunction blue-green light-emitting-diode grown by radio-frequency plasma-assisted molecular beam epitaxy

Abstract

Optical properties of Ga_0.82In_0.18N p-n homojunction light-emitting-diode are investigated by the photovoltaic, photoluminescence-excitation, electroluminescence (EL), and photoluminescence (PL) measurements. Although the X-ray diffraction measurements indicate a uniform InN molar fraction x in the sequentially grown n- and p-type Ga_0.82In_0.18N layers, the EL and PL exhibited different peak energies at room temperature. The difference is explained by the emission models in the n- and p-type of Ga_0.82In_0.18N layers. The results demonstrate a potential use of Ga_1-xIn_xN p-n homojunction for further development of functional device structures.