Volume 42 (2017) Issue 3 Pages 61-64
Yttria-stabilized zirconia (Zr0.92Y0.08O2-δ:YSZ) thin films have been prepared on Al2O3 (0001) substrates by RF magnetron sputtering. The as-deposited YSZ thin films prepared at 500 ºC exhibited the (111) and (200) peak at 2θ values of 30.0º and 34.8º, respectively, which close to the peak positions of the YSZ single crystal. The Zr4+, Y3+ valence states and valence band were confirmed by photoemission spectroscopy. When the as-deposited YSZ thin films were annealed in the saturated H2O atmosphere, the Fermi level shifted to conduction band side by 1.0 eV. The above result indicates that the proton of the H2O annealed YSZ thin film acts as donor ions in the surface state.