2019 Volume 44 Issue 2 Pages 65-68
Using an alcohol gas source chemical vapor deposition method, we attempted to grow single-walled carbon nanotube (SWCNT) growth using Co catalysts on Al2O3 buffer layers. Reducing the growth temperature decreased the optimal ethanol pressure to obtain the highest SWCNT yield. By optimizing the ethanol pressure, we succeeded in growing SWCNTs at 400ºC. Irrespective of the growth temperature, SWCNT yields from Co catalysts on Al2O3 buffer layers were higher than those on SiO2/Si substrates, but the enhancing effects of Al2O3 buffer layers on SWCNT yield were reduced below 500ºC. Taking into account both in-plane X-ray diffraction results and decrease of catalyst aggregation in the low temperature region, we concluded that the density of Co particles suitable for SWCNT growth increased on SiO2 surface at low temperature, resulting in the reduction of difference in SWCNT yield at low temperature between Al2O3 buffer layers and SiO2/Si substrates.
