2020 Volume 45 Issue 5 Pages 173-178
Tin dioxide (SnO2) films were epitaxially grown on m-plane sapphire and (001) plane titanium dioxide (TiO2) substrates using mist chemical vapor deposition. The quality of SnO2 film was evaluated by full width at half maximum (FWHM) of X-ray diffraction (XRD) ω-rocking curve. The lowest value of FWHM was 0.06° for the SnO2 film on TiO2 substrate, which was lower than the other reported values. Not only vertical lattice constant but also lateral one were measured by XRD reciprocal space mapping (RSM) and transmission electron microscopy (TEM). Then, the lattice constants of the SnO2 film on TiO2 substrate were the same as those of the bulk SnO2. From the results of TEM and electron backscattering diffraction (EBSD) observations, the quality of the SnO2 film was higher at upper portion of the SnO2 film. These results indicated that high-quality single crystal SnO2 film was formed on TiO2 substrate.
