Abstract
A numerical model of the thermoreflectance of doped SiC substrate and typical numerical results are presented. The model considers the temporal response of the electron temperature and the number density of the electronic carriers. Calculated results show steep increase of electron temperature and the resulting increase of reflectivity. As a result, the reflected laser pulse is compressed by means of the temporal response of the thermoreflectance characteristics of SiC substrate. The technique can be used for the compression of ultrashort pulse laser light.
