Abstract
Thermal simulation becomes conventional in thermal design for all electronic devices including automotive electronic control unit (ECU). The thermal resistance of semiconductor package is important for predicting temperature rise by self-heating or heat receiving precisely, but it is difficult to obtain the quantity of thermal resistance from semiconductor makers directly due to several reasons such as industrial secrets. Recently, JEDEC standardized “Transient Dual Interface Test Method (TDI)” to measure thermal resistance of junction-to-case (θJC) for power devices with higher accuracy and more easily than traditional test method. We have developed newly TDI which can improve the credibility of TDI. In this method, three kinds of θJC are extracted separately as follows: 1. Branch point of two transient thermal resistances (conventional TDI), 2. Calculate the heat capacity of thermal path in the package and read structure function at that point, 3. Knick point of structure function. The range value where the exact θJC exists can be determined by comparing each θJC. It is very valuable for both semiconductor makers and assembly makers to standardize high reliable measurement of θJC and this method is expected to be essential in order to strengthen competitiveness in global market.
