Tohoku-Section Joint Convention Record of Institutes of Electrical and Information Engineers, Japan
[volume title in Japanese]
Session ID : 2A02
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Host: IEEE SENDAI SECTION

Evaluation of Drive Current of Hf-based High-k n-type MOSFET with p+ poly-Si or Metal Gate Electrode
*[in Japanese], [in Japanese], [in Japanese]
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© 2009 Organizing Committee of Tohoku-Section Joint Convention of Institutes of Electrical and Information Engineers, Japan
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