Monolithic Low-noise Amplifier for DBS Reception
N. Shiga, S. Nakajima, K. Otobe, T. Sekiguchi, N. Kuwata, K. Matsuzaki, H. Hayashi
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Pages 125-126
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Pages 125-126
A 12GHz-band monolithic four-stage low-noise amplifier was successfully demonstrated. This MMIC amplifier is based on pulse-doped GaAs MESFET technology with 0.3μm gate. A noise figure of 1.1dB and a gain of 26dB at 12GHz with VSWR matches of less than 1.6 were achieved.
