Analysis of a random noise reduction cell for a STACK-CCD imager

Abstract

A new type image sensor cell which can reduce a random noise, has been proposed and evaluated with a cell test element. The new type cell structure is featured by the signal voltage feedback gate (FBG). The FBG is inserted between a storage diode and a CCD register, and it controls the signal read-out channel potential. The random noise which occurs at the signal charge storage diode has been reduced from 42 electrons [rms] to 18 electrons [rms] for 5 fF storage diode capacitance.