Fabrication of Amorphous Silicon TFT by Atmospheric Pressure CVD

Byung-Chul AHN; Jeong Hyun KIM; Young-Jin LIM; Woo Yeol KIM; Kwang Nam KIM; Hee Kyung KANG; Soon Sung YOO; Jin JANG

doi:10.11485/tvtr.16.66_7

Byung-Chul AHN, Jeong Hyun KIM, Young-Jin LIM, Woo Yeol KIM, Kwang Nam KIM, Hee Kyung KANG, Soon Sung YOO, Jin JANG

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Keywords: thin film transistor, amorphous silicon, atmospheric pressure CVD, disilane

RESEARCH REPORT / TECHNICAL REPORT FREE ACCESS

1992 Volume 16 Issue 66 Pages 7-12

DOI https://doi.org/10.11485/tvtr.16.66_7

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Abstract

Amorphous silicon TFTS (a-Si TFTs) have been investigated by the atmospheric pressure CVD (APCVD) method using disilane. The deposition rate of a-Si was higher than 15 nm/min at 420 ℃. The field effect mobility and the on/off current ratio were higher than 0.38 cm^2/Vs and 10^4, respectively.

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