A STUDY ON MAGNETIC DOMAIN STRUCTURE AND DOMAIN WALL STATE IN SMALL MR SENSOR

Abstract

With regard to practical structure of element, the transition process of domain structure during magnetizatization reversal in MR thin film sensor has been observed and investigated by wet and dry Bitter pattern technique. It is shown that the domain wall mergence and the wall-state transition during this incoherent magnetization rotation is closely related to Barkhauson jumps in the sensor, and also it is noted that the hooklike domain that appears at the link point of sensor and leads is involved in the irreversible transition.